The G10-SiC from AIXTRON SE - high-throughput tool for silicon carbide power chips

Reviewed: ad hoc news B2B & Pro desk. Edited and checked on 2026-06-26, 09:30. Details in the imprint.

G10-SiC from AIXTRON SE stands in a cleanroom bay like a white industrial fridge, doors closed with a quiet hiss as wafer carriers glide inside. Operators in bunny suits barely touch it; the touchscreen interface and automated handling do the work.

What the G10-SiC is built for

The G10-SiC is a production-class MOCVD reactor tailored for silicon carbide epitaxy, aimed at fabs producing power devices for electric vehicles, renewable energy inverters and industrial drives. Compared with older tools, it focuses on higher throughput per square meter of fab space.

AIXTRON designed this platform around high-wafer-density process chambers to run many SiC wafers in parallel, so a single tool can support multiple production lines instead of one niche pilot line. The goal is simple: more qualified wafers per hour at consistent layer quality.

Process details that matter in the fab

In silicon carbide epitaxy, engineers care about thickness uniformity, defect density and repeatability, not flashy chassis design. The G10-SiC targets tight control of layer thickness and dopant profiles across all wafers in a batch, because every non-uniform region quickly turns into yield loss.

Power chip makers also want headroom for new device structures like higher-voltage MOSFETs or advanced diodes, so AIXTRON equips the system with recipe flexibility and monitoring hooks for in-situ control. That way a process team can tune growth conditions while keeping a stable baseline for volume orders.

How it fits into SiC expansion plans

For AIXTRON chief executive Felix Grawert, silicon carbide is one of the core growth engines, because every new EV platform and fast-charging station needs more efficient power electronics. A tool like the G10-SiC is therefore pitched as a way to rapidly add epitaxy capacity without rebuilding entire fabs.

Device manufacturers can cluster several G10-SiC tools and ramp in stages, matching capital spending to customer orders. That modular approach fits how many European and Asian power chip makers currently plan their expansions, with cautious but steady capacity increases.

Strengths and trade-offs in daily use

Process engineers typically highlight automation and stability when choosing epitaxy gear. The G10-SiC emphasizes automated wafer handling, recipe management and data logging so that night-shift teams can monitor trends instead of constantly tweaking knobs.

The trade-off is that such complex reactors demand disciplined maintenance and periodic chamber conditioning, or the same tight uniformity that impresses customers can drift. Fabs need trained technicians and clear procedures to keep uptime and yield where finance teams expect them.

Context and share reference

AIXTRON has positioned itself as a specialist for compound semiconductor production tools, supplying equipment for gallium nitride, gallium arsenide and silicon carbide devices used in power and optoelectronics markets. The AIXTRON SE share price is primarily driven by order intake for systems like the G10-SiC on the Xetra market in euros.

This article was AI-assisted and editorially reviewed. Product information without guarantee; prices and availability may change at short notice. No investment advice, no buy or sell recommendation. Stock-market transactions involve risks up to total loss.