Infineon Pours EUR 1.1 Billion Into Villach for World's First 300-Millimeter GaN Line
Published on 10/27/2026 at 14:51 | Editorial boerse-global.de
Infineon has committed EUR 1.1 billion to its Villach site, where it intends to build what it describes as the world's first high-volume production of GaN power semiconductors on 300-millimeter wafers. Reuters reports that the output is destined for data centers, extending the company's manufacturing base for the power semiconductors that keep those facilities running.
The Austrian expansion lands alongside a fresh high-voltage reference design for power distribution in AI data centers. The distribution board lets customers evaluate supply systems at ±400 V and 800 V, giving them a way to test architectures before committing to production.
Data Center Ties Deepen
That work builds on an agreement Infineon unveiled on October 21 with NVIDIA covering GaN-based power supply systems for AI data centers built around an 800-volt DC architecture. The two partners are concentrating on a high-voltage intermediate bus converter using GaN for those 800-volt DC designs.
Silicon carbide supply has also been secured. On October 15, Infineon struck a multi-year deal with Wolfspeed for 200-millimeter wafers. The companies expanded and extended their existing supply agreement, a move that supports Infineon's shift away from 150-millimeter manufacturing and broadens its substrate sourcing.
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Automotive Portfolio Widens
On the vehicle side, Infineon introduced the ENDOPACK brand for chip-embedding solutions. ENDOPACK Cell is a high-voltage product qualified for automotive use that can be integrated directly into printed circuit boards, drawing on the company's Automotive Gen2p CoolSiC MOSFET technology rated at 1200 volts.
The company also brought LinearFET MOSFET technology to market, aimed at solid-state power distribution systems in electric vehicles and software-defined cars. Its OptiMOS-7 automotive MOSFET range, meanwhile, gained variants in a TOLL package featuring low on-resistance and intended for 12-volt and 48-volt vehicle systems.
A separate high-voltage reference design for battery management pairs the AURIX TC4x microcontroller with a parallel processing unit, allowing battery models to run directly on the battery management unit. Unlike LinearFET, this one arrives as a reference design rather than a released product.
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Start-ups and a Munich Showcase
Thursday saw UnternehmerTUM Accelerator, Microsoft, Infineon and NVIDIA jointly launch the Physical AI Growth Lab. The program targets European start-ups working in physical AI, robotics and industrial AI, runs from January to April 2027, and takes no equity stake in participants.
Infineon has also lined up presentations for electronica in Munich from November 10 to 13, where it plans to display technologies and system solutions spanning physical AI, robotics and mobility, alongside edge devices, software-defined vehicles and power supply infrastructure.
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